description the 2n5679 and 2n5680 are silicon epitaxial planar pnp transistors in jedec to-39 metal case intended for use as drivers for high power transistors in general purpose, amplifier and switching circuit the complementary npn types are the 2n5681 and 2n5682 respectively absolute maximum ratings t case = 25c unless otherwise stated 2n5680 2n5679 2n5679 2n5680 document number 3076 issue 1 semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice. information f urnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omi ssions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders. pnp silicon transistors v cbo collector ? base voltage v ceo collector ? emitter voltage (i b = 0) v ebo emitter ? base voltage (i c = 0) i c continuous collector current i b base current p tot total dissipation at t case 25c t amb 25c t stg operating and storage temperature range t j junction temperature -100v -120v -100v -120v -4v -1a -0.5a 10w 1w ?65 to +200c 200c mechanical data dimensions in mm (inches) 0.89 (0.035) max. 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. 0.71 (0.028) 0.86 (0.034) 2.54 (0.100) 45 6.10 (0.240) 6.60 (0.260) 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 1 2 3 0.74 (0.029) 1.14 (0.045) to-39 (to-205ad) pin 1 ? emitter pin 2 ? base pin 3 ? collector
parameter test conditions min. typ. max. unit a a ma a v mhz pf r thj-case r thj-amb 17.5 175 thermal resistance junction-case max thermal resistance junction-ambient max c/w c/w -1 -1 -1 -1 -1 -1 -10 -10 -1 -100 -120 -0.6 -1 -2 -1 40 150 5 30 50 40 2n5679 2n5680 document number 3076 issue 1 semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice. information f urnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omi ssions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders. i cbo i cev i ceo i ebo v ceo(sus)* v ce(sat)* v be* h fe* f t c cbo h fe collector cut off current collector cut off current collector cut off current emitter cut off current collector emitter sustaining voltage collector emitter saturation voltage base emitter voltage dc current gain transistion frequency collector base capacitance small signal current gain i e = 0 for 2n5679 v cb = -100v for 2n5680 v cb = -120v v be = 1.5 for 2n5679 v ce = -100v for 2n5680 v ce = -120v t case = 150 c for 2n5679 v ce = -100v for 2n5680 v ce = -120v i b = 0 for 2n5679 v ce = -70v for 2n5680 v ce = -80v i c = 0 v eb = -4v i b = 0 i c = -10ma for 2n5679 for 2n5680 i c = -250ma i b = -25ma i c = -500ma i b = -50ma i c = -1a i b = -200ma i c = -250ma v ce = -2v i c = -250ma v ce = -2v i c = -1a v ce = -2v i c = -100ma v ce = -10v f = 10mhz i e = 0 v cb = -20v f = 1mhz i c = -0.2a v ce = -1.5v f = 1khz electrical characteristics (t case = 25 c unless otherwise stated) * pulse test t p = 300 s , < 2% thermal data
|
